10N60 Datasheet PDF - Unisonic Technologies
| Part Number | 10N60 | |
| Description | 600/650 Volts N-CHANNEL POWER MOSFET | |
| Manufacturers | Unisonic Technologies | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 9 pages ) | ||
Mosfet 10n60b
DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance.
Preview 1 page No Preview Available ! www.DataSheet4U.com 10 Amps, 600/650 Volts Power MOSFET The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low Crss ( typical 18 pF) * 100% avalanche tested SYMBOL *Pb-free plating product number: 10N60L 3.Source Ordering Number Lead Free Plating 10N60L-x-TA3-T TO-220 123 Packing www.unisonic.com.tw 1 of 7 |
www.DataSheet4U.com Power MOSFET Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform RD L BVDSS VDD VDD tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms www.unisonic.com.tw QW-R502-119.A Preview 5 Page |
600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 TO-220F charge, minimized on-state resistance and withstanding high energy. B, October 2003©2003 Fairchild Semiconductor CorporationElectrical CharacteristicsTC = 25°C unless otherwise notedNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width≤ 300µs, Duty cycle. 10N60 datasheet, 10N60 datasheets, 10N60 pdf, 10N60 circuit: UTC - 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
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10N60 Datasheet - 600V, 10A, N-ch MOSFET - DataSheetCafe.com
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Featured Datasheets
10N60
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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